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RB501V-40
Diodes
Schottky barrier diode
RB501V-40
!Applications Low current rectification !External dimensions (Units : mm)
CATHODE MARK
CATHODE MARK
!Features 1) Small surface mounting type. (UMD2) 2) Low VF. (VF=0.43V Typ. at 100mA) 3) High reliability.
2.50.2
1.70.1
2.50.2
1.70.1
4
0.30.05 1.250.1 +0.2 0.7 -0.1 0.1 +0.1 -0.05
4
0.30.05 1.250.1 +0.2 0.7 -0.1 0.1 +0.1 -0.05
!Construction Silicon epitaxial planar
ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323
There are two different markings.
!Absolute maximum ratings (Ta = 25C)
Parameter
Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature
60 Hz for 1
Symbol VRM VR IO IFSM Tj Tstg
Limits 45 40 0.1 1 125 -40~+125
Unit V V A A
C C
!Electrical characteristics (Ta = 25C)
Parameter Forward voltage Forward voltage Reverse current Capacitance between terminals
Note) ESD sensitive product handling required.
Symbol VF1 VF2 IR CT
Min. - - - -
Typ. - - - 6.0
Max. 0.55 0.34 30 -
Unit V V A pF IF=100mA IF=10mA VR=10V
Conditions
VR=10V, f=1MHz
RB501V-40
Diodes
!Electrical characteristic curves (Ta = 25C)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
1000
10m
125C
100
FORWARD CURRENT : IF (mA)
REVERSE CURRENT : R (A)
1m
75C
100
100
10
10
25C
12 5 C 75 C
10
25 C
C
-25
1
1 0
0.1
0.2
0.3
0.4
0.5
0.6
0.1 0
10
20
30
40
1 0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between terminals characteristics
100
Io CURRENT (%)
80 60 40 20 0 0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta (C)
Fig. 4 Derating curve (mounting on glass epoxy PCBs)

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